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IRFD1Z1 - N-Channel MOSFET

Download the IRFD1Z1 datasheet PDF. This datasheet also covers the IRFD1Z0 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 0.4A and 0.5A, 60V and 100V.
  • rDS(ON) = 2.4Ω and 3.2Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFD1Z0-HarrisSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRFD1Z1
Manufacturer Harris Semiconductor
File Size 57.16 KB
Description N-Channel MOSFET
Datasheet download datasheet IRFD1Z1 Datasheet

📁 Similar Datasheet

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IRFD1Z0 FIELD EFFECT POWER TRANSISTOR GE
IRFD1Z2 FIELD EFFECT POWER TRANSISTOR GE
IRFD1Z3 FIELD EFFECT POWER TRANSISTOR GE
IRFD110 Power MOSFET Vishay

Other Datasheets by Harris Semiconductor

Part Number Description
IRFD1Z0 N-Channel MOSFET
IRFD1Z2 N-Channel MOSFET
IRFD1Z3 N-Channel MOSFET
IRFD120 N-Channel MOSFET
IRFD121 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs Features • 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.