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IRFD1Z1

Manufacturer: GE

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRFD1Z1 datasheet preview

Datasheet Details

Part number IRFD1Z1
Datasheet IRFD1Z1 IRFD1Z0 Datasheet (PDF)
File Size 197.33 KB
Manufacturer GE
Description FIELD EFFECT POWER TRANSISTOR
IRFD1Z1 page 2

IRFD1Z1 Overview

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

IRFD1Z1 Key Features

  • Polysilicon gate
  • Improved stability and reliability
  • No secondary breakdown
  • Excellent ruggedness
  • Ultra-fast switching
  • Independent of temperature
  • Voltage controlled
  • High transconductance
  • Low input capacitance
  • Reduced drive requirement

IRFD1Z1 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Harris Semiconductor Logo IRFD1Z1 N-Channel MOSFET Harris Semiconductor
GE logo - Manufacturer

More Datasheets from GE

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Part Number Description
IRFD1Z0 FIELD EFFECT POWER TRANSISTOR
IRFD1Z2 FIELD EFFECT POWER TRANSISTOR
IRFD1Z3 FIELD EFFECT POWER TRANSISTOR
IRFD110 FIELD EFFECT POWER TRANSISTOR
IRFD111 FIELD EFFECT POWER TRANSISTOR
IRFD120 FIELD EFFECT POWER TRANSISTOR
IRFD121 FIELD EFFECT POWER TRANSISTOR
IRFD210 FIELD EFFECT POWER TRANSISTOR
IRFD211 FIELD EFFECT POWER TRANSISTOR
IRFD212 FIELD EFFECT POWER TRANSISTOR

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