IRFD1Z1 - FIELD EFFECT POWER TRANSISTOR

Download the IRFD1Z1 datasheet PDF. This datasheet also covers the IRFD1Z0 variant, as both devices belong to the same field effect power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-CHANNEl CASE STYLE 4-PIN DIP.

📥 Download Datasheet

IRFD1Z1 field effect power transistor by GE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRFD1Z0-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRFD1Z1
Manufacturer	GE
File Size	197.33 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD1Z1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRFD1Z1	N-Channel MOSFET	Harris Semiconductor
IRFD1Z0	N-Channel MOSFET	Harris Semiconductor
IRFD1Z2	N-Channel MOSFET	Harris Semiconductor
IRFD1Z3	N-Channel MOSFET	Harris Semiconductor
IRFD110	Power MOSFET	Vishay

Other Datasheets by GE

Part Number	Description
IRFD1Z0	FIELD EFFECT POWER TRANSISTOR
IRFD1Z2	FIELD EFFECT POWER TRANSISTOR
IRFD1Z3	FIELD EFFECT POWER TRANSISTOR
IRFD110	FIELD EFFECT POWER TRANSISTOR
IRFD111	FIELD EFFECT POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

~[R3D~ [F~lr FIELD EFFECT POWER TRANSISTOR IRFD1Z0,1Z1 D82AL29K2 0.5 AMPERES 100, 60 VOLTS RDS(ON) = 2.4 !1 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.