IRFD213, IRFD212 Datasheet - GE

IRFD213 FIELD EFFECT POWER TRANSISTOR

~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power . supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with .

IRFD213 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD212-GE.pdf

IRFD213 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFD213, IRFD212. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFD213, IRFD212

Manufacturer:

File Size:

179.97 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFD213, IRFD212.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFD210 N-Channel Power MOSFET (Intersil Corporation)

IRFD210 Power MOSFET (International Rectifier)

IRFD210 Power MOSFET (Vishay)

IRFD210 FIELD EFFECT POWER TRANSISTOR (GE)

IRFD210PBF HEXFET Power MOSFET (International Rectifier)

IRFD211 FIELD EFFECT POWER TRANSISTOR (GE)

IRFD212 FIELD EFFECT POWER TRANSISTOR (GE)

IRFD213 N-Channel Transistor (IOR)

TAGS

IRFD213 IRFD212 FIELD EFFECT POWER TRANSISTOR GE

IRFD213 Distributor