IRFF323, IRFF322 Datasheet - GE

IRFF323 FIELD EFFECT POWER TRANSISTOR

~D~~ IRFF322,323 FIELD EFFECT PONER TRANSISTOR 2.0 AMPERES 400, 350 VOLTS . ROS(ON) = 2.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF323 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF322-GE.pdf

IRFF323 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFF323, IRFF322. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFF323, IRFF322

Manufacturer:

File Size:

189.39 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFF323, IRFF322.
Please refer to the document for exact specifications by model.

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TAGS

IRFF323 IRFF322 FIELD EFFECT POWER TRANSISTOR GE

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