* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFF333
GE
194.49 KB
Field effect power transistor.
~o~[f~ IRFF332,333 FIELD EFFECT POVVER TRANSISTOR 3.0 AMPERES 400, 350 VOLTS ROS(ON) = 1.5!} Preliminary This series of N-Channel Enhancement-mode.
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