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~o~[f~ IRFF332,333
FIELD EFFECT POVVER TRANSISTOR
3.0 AMPERES 400, 350 VOLTS ROS(ON) = 1.5!}
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
IRFF333 Datasheet
