IRFF421, IRFF420 Datasheet - GE

IRFF421 FIELD EFFECT POWER TRANSISTOR

~D~[F~ IRFF420,421 FIELD EFFECT POVVER TRANSISTOR 1.6 AMPERES 500, 450 VOLTS ROS(ON) =3.0 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF421 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF420-GE.pdf

IRFF421 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFF421, IRFF420. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFF421, IRFF420

Manufacturer:

File Size:

188.28 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFF421, IRFF420.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFF420 N-Channel Power MOSFET (Seme LAB)

IRFF420 N-Channel Power MOSFET (Intersil Corporation)

IRFF420 HEXFET TRANSISTORS (International Rectifier)

IRFF420 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF422 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF423 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)

IRFF430 N-Channel Power MOSFET (Intersil Corporation)

TAGS

IRFF421 IRFF420 FIELD EFFECT POWER TRANSISTOR GE

IRFF421 Distributor