Datasheet4U Logo Datasheet4U.com

IRFF430 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

📥 Download Datasheet

Datasheet Details

Part number IRFF430
Manufacturer GE
File Size 186.22 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRFF430 Datasheet

Overview

~D~[F~ IRFF430,431 FIELD EFFECT POVVER TRANSISTOR 2.75 AMPERES 500, 450 VOLTS ROS(ON) =1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Seme LAB Logo IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Seme LAB
Intersil Corporation Logo IRFF430 N-Channel Power MOSFET Intersil Corporation
International Rectifier Logo IRFF430 HEXFET TRANSISTORS International Rectifier

More Datasheets from GE

Part Number Description
IRFF431 FIELD EFFECT POWER TRANSISTOR
IRFF432 FIELD EFFECT POWER TRANSISTOR
IRFF433 FIELD EFFECT POWER TRANSISTOR
IRFF420 FIELD EFFECT POWER TRANSISTOR
IRFF421 FIELD EFFECT POWER TRANSISTOR
IRFF422 FIELD EFFECT POWER TRANSISTOR
IRFF423 FIELD EFFECT POWER TRANSISTOR
IRFF130 FIELD EFFECT POWER TRANSISTOR
IRFF131 FIELD EFFECT POWER TRANSISTOR
IRFF132 FIELD EFFECT POWER TRANSISTOR