IRFF430 Description
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance. The HEXFET transistors also.
- Part: IRFF430
- Manufacturer: International Rectifier
- Size: 133.06 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
IRFF430 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Intersil |
IRFF430 | N-Channel Power MOSFET |
GE |
IRFF430 | FIELD EFFECT POWER TRANSISTOR |