IRFF433, IRFF432 Datasheet - GE

IRFF433 FIELD EFFECT POWER TRANSISTOR

~[R30~~LF IRFF432,433 FIELD EFFECT POVVER TRANSISTOR 2.25 AMPERES 500, 450 VOLTS ROS(ON) =2.0 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operat.

IRFF433 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF432-GE.pdf

IRFF433 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFF433, IRFF432. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFF433, IRFF432

Manufacturer:

File Size:

197.77 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFF433, IRFF432.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)

IRFF430 N-Channel Power MOSFET (Intersil Corporation)

IRFF430 HEXFET TRANSISTORS (International Rectifier)

IRFF430 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF431 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF432 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF420 N-Channel Power MOSFET (Seme LAB)

IRFF420 N-Channel Power MOSFET (Intersil Corporation)

TAGS

IRFF433 IRFF432 FIELD EFFECT POWER TRANSISTOR GE

IRFF433 Distributor