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IRFP353 Datasheet, GE

IRFP353 transistor equivalent, field effect power transistor.

IRFP353 Avg. rating / M : 1.0 rating-12

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IRFP353 Datasheet

Features and benefits


* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature

Application

including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

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IRFP353 Page 1 IRFP353 Page 2

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