* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching -Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFP353
GE
186.97 KB
Field effect power transistor.
~D~~ FIELD EFFECT POVVER TRANSISTOR IRFP352,353 13 AMPERES 400, 350 VOLTS ROS(ON) = 0.4 il This series of N-Channel Enhancement-mode Power MOSFETs u.
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