VN10KMA Key Features
- Directly drives inductive loads
- High speed, high peak current switching
- Inherent current sharing capability when paralleled
- Directly interfaces to CMOS, DTL, TTL logic
- Simple straight-f
- Part: VN10KMA
- Manufacturer: GE
- Size: 145.01 KB
Other VN10KMA Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Siliconix |
VN10KM | N-Channel Enhancement-Mode MOS Transistors |
Vishay |
VN10KM | N-Channel Enhancement-Mode MOS Transistors |
Supertex Inc |
VN10K | N-Channel Enhancement-Mode Vertical DMOS FETs |
Microchip Technology |
VN10K | N-Channel Vertical DMOS FET |
TT Electronics |
VN10K | N-Channel MOSFET |
VN10KMA Description
~ffi3D~ [F~u FIELD EFFECT POVVER TRANSISTOR VN10KMA 0.5 AMPERES 60 VOLTS RDS(ON) =5.0 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters...