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VN10KM - N-Channel Enhancement-Mode MOS Transistors

Download the VN10KM datasheet PDF. This datasheet also covers the VN10KE variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VN10KE-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN10KM
Manufacturer Siliconix
File Size 99.24 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN10KM Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN10KE N-Channel Enhancement-Mode MOS Transistors
VN100D (VN1xxD) MOSPOWER
VN100x (VN1xxD) MOSPOWER
VN10LE N-Channel Enhancement-Mode MOS Transistors
VN10LM N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
~Siliconix .,1;11 incorporated VN0610L, VN10KE, VN10KM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE TO-206AC (TO-52) BOTTOM VIEW VN0610L 60 5 0.27 TO-92 VN10KE 60 5 0.17 TO-206AC VN10KM 60 5 0.31 TO-237 Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN & TAB 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0610L VN10KE VN10KM UNITS Drain-Source Voltage Gate-Source Voltage 2 Vos 60 60 60 V Vas 15/-0.3 15/-0.3 15/-0.3 Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TA= 25°C 10 TA = 100°C 10M TA= 25°C Po TA = 100°C 0.