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VN10KMA - FIELD EFFECT POWER TRANSISTOR

Key Features

  • Directly drives inductive loads.
  • High speed, high peak current switching.
  • Inherent current sharing capability when paralleled.
  • Directly interfaces to CMOS, DTL, TTL logic.
  • Simple straight-f.

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Datasheet Details

Part number VN10KMA
Manufacturer GE
File Size 145.01 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet VN10KMA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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~ffi3D~ [F~u FIELD EFFECT POVVER TRANSISTOR VN10KMA 0.5 AMPERES 60 VOLTS RDS(ON) =5.0 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.