120N03 Datasheet, GFD

120N03 mosfet equivalent, mosfet.

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Features and benefits

� VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.5mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Goo.

Application

. 120N03 VDS 30V RDS(ON) ID 2.5mΩ 120A GENERAL FEATURES � VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:.

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