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120N03 Datasheet MOSFET

Manufacturer: GFD

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Datasheet Details

Part number 120N03
Manufacturer GFD
File Size 831.50 KB
Description MOSFET
Datasheet download datasheet 120N03 Datasheet

General Description

The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

120N03 VDS 30V RDS(ON) ID 2.5mΩ 120A GENERAL

Overview

DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

120N03 VDS 30V RDS(ON) ID 2.

Key Features

  • VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.5mΩ ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stabilty and unifomity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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