120N03 datasheet, mosfet equivalent, GFD

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120N03 Features and benefits

� VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.5mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Goo.

120N03 Application

. 120N03 VDS 30V RDS(ON) ID 2.5mΩ 120A GENERAL FEATURES � VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:.

120N03 Description

The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 120N03 VDS 30V RDS(ON) ID 2.5mΩ 120A GENERAL FEATURES � VDS = 30 V, ID = 120 A RDS(ON).

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