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2301 P-Channel Enhancement Mode Power MOSFET

2301 Description

GOFORD 2301 .
The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

2301 Features

* VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -20V 48mΩ 61 mΩ -3 A
* High Power and current handing capability
* RoHS Compliant

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Datasheet Details

Part number
2301
Manufacturer
GFD
File Size
1.26 MB
Datasheet
2301-GFD.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET GFD
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