Datasheet4U Logo Datasheet4U.com

2301H - N-Channel MOSFET

Datasheet Summary

Description

The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 105mΩ 65mΩ -2 A.
  • High Power and current handing capability.
  • RoHS Compliant.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – 2301H

Datasheet Details

Part number 2301H
Manufacturer GOFORD
File Size 2.35 MB
Description N-Channel MOSFET
Datasheet download datasheet 2301H Datasheet
Additional preview pages of the 2301H datasheet.

📁 Similar Datasheet

  • 2301 - P-Channel Enhancement Mode Power MOSFET (GFD)
  • 2301 - 18V P-channel enhanced MOSFET (ChipSourceTek)
  • 2301-RC - High Current Toroid Inductors (Bourns)
  • 230-JC6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
  • 230-JS6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
  • 2300 - 100 pin Strip Header (3M)
  • 2302 - Class C Microwave (ETC)
  • 2302 - N-Channel MOSFET (ETC)
  • 2302 - N-Channel Enhancement Mode Power MOSFET (GFD)
  • 2302-RC - High Current Toroid Inductors (Bourns)
Other Datasheets by GOFORD
  • 2300F - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
GOFORD DESCRIPTION The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDSS RDS(ON) RDS(ON) ID @ -4.
Published: |