2301H - N-Channel MOSFET

General Description

The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 105mΩ 65mΩ -2 A.
High Power and current handing capability.
RoHS Compliant.
Surface Mount Package.

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2301H n-channel mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	2301H
Manufacturer	GOFORD
File Size	2.35 MB
Description	N-Channel MOSFET
Datasheet	2301H Datasheet

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GOFORD DESCRIPTION The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDSS RDS(ON) RDS(ON) ID @ -4.