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2301 - P-Channel Enhancement Mode Power MOSFET

General Description

The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -20V 48mΩ 61 mΩ -3 A.
  • High Power and current handing capability.
  • RoHS Compliant.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number 2301
Manufacturer GFD
File Size 1.26 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 2301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.