GFD 2301
The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.| Part No. | 2301 |
|---|---|
| Datasheet | 2301 Download |
| Manufacturer | GFD |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -20V 48mΩ 61 mΩ -3 A● High Power and current handing capability
● RoHS Compliant
● Surface Mount Package Application
●PWM applications
●Load switch
●Power management D G S Schematic diagram Marking and pin Assignment SOT-23 Ordering Information Part Number 2301 Marking 2301 Case SOT-23 Packaging 3000pcs/Reel
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJAELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V Limit -20 ±10 -3 -10 1 -55 To 150 Unit V V A A W ℃...
