Datasheet Details
| Part number | 2301 |
|---|---|
| Manufacturer | GFD |
| File Size | 1.26 MB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet | 2301-GFD.pdf |
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Overview: GOFORD 2301.
| Part number | 2301 |
|---|---|
| Manufacturer | GFD |
| File Size | 1.26 MB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet | 2301-GFD.pdf |
|
|
|
The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
GENERAL
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2301 | 18V P-channel enhanced MOSFET | ChipSourceTek |
 |
2301-RC | High Current Toroid Inductors | Bourns |
| GOFORD | 2301H | N-Channel MOSFET | GOFORD |
| Part Number | Description |
|---|---|
| 2302 | N-Channel Enhancement Mode Power MOSFET |