2301 - 18V P-channel enhanced MOSFET

ChipSourceTek

Datasheet Details

Part number	2301
Manufacturer	ChipSourceTek
File Size	390.09 KB
Description	18V P-channel enhanced MOSFET
Datasheet	2301 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2301	P-Channel Enhancement Mode Power MOSFET	GFD
2301-RC	High Current Toroid Inductors	Bourns
2301H	N-Channel MOSFET	GOFORD
230-JC6DT3	DIESEL ENGINE-GENERATOR SET	MTU Onsite Energy
230-JS6DT3	DIESEL ENGINE-GENERATOR SET	MTU Onsite Energy

Other Datasheets by ChipSourceTek

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2301 18V P MOS VDS= -18V RDS(ON), Vgs@-4.5V, Ids@-1.0A =60mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 82mΩ@TYP 、   SOT- 23 S ou rc e ek Gate rceT 、(TA= 25℃，) ou S ip h C TA=25℃ TA=75℃ D ra in P-Channel MOSFET VDS VGS ID IDM PD TJ, Tstg -18 ±12 -2.8 -6 1.25 0.8 -55 to 150 V A W ℃ （PCB ） RθJA 140 W/℃ ：1、。 2、：。 TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com 2301 18V P MOS 、 BVDSS VGS = 0V, ID = 250uA -12 -18 -- V RDS(on) VGS = -4.5V, ID = -1A -- RDS(on) VGS = -2.5V, ID = -0.5A -- 60 85 mΩ 82 115 mΩ VGS(th) VDS = VGS, ID = 250uA -0.4 -0.7 -1.