80N03 mosfet equivalent, mosfet.
� VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V
� High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and.
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80N03
VDS
RDS(ON)
ID
30V
--
80A
GENERAL FEATURES
� VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V
� High de.
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