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2SA1203 - PNP Transistor

Features

  • z Suitable for output stage of 3 watts amplifier Pb Lead-free z Suitable flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2883 Production specification 2SA1203.

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Silicon Planar Epitaxial Transistor FEATURES z Suitable for output stage of 3 watts amplifier Pb Lead-free z Suitable flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2883 Production specification 2SA1203 ORDERING INFORMATION Type No. Marking 2SA1203 HO1/HY1 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) -30 -30 -5 -1.5 -0.3 500 1000(Note 1) -55 to +150 Units V V V A A mW ℃ E038 Rev.A www.gmicroelec.
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