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PNP Epitaxial Planar Silicon Transistors
FEATURES
z Low collector-emitter saturation
Pb
Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA)
z Excellent DC Current Gain Linearity:
HFE=100 TYP.(VCE=-1.0V IC=-0.1
Production specification
2SB798
ORDERING INFORMATION
Type No.
Marking
2SB798
KR/KQ/KP
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
IC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Pulse(Note1)
-30 V -25 V -5.0 V -1.0 A -1.5 A
PC Collector Dissipation(Note2)
2W
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Note:
1. PW≤10ms，Duty Cycle≤50%; 2.When mounted on a ceramic substrate of 16cm2*0.7mm;
℃
E148 Rev.A
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2SB798 Datasheet
