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2SB798 Datasheet PDF

Unisonic Technologies 2SB798

2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.
Part No. 2SB798
Datasheet 2SB798 Download
Manufacturer
Unisonic Technologies
Description POWER TRANSISTOR
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2SB798 datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A)
● ORDERING INFORMATION Order Number 2SB798G-x-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-020.C 2SB798 PNP EPITAXIAL SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -30 -25 V V Emitter-Base Voltage Collector Current DC Pulse(Note 1) VEBO IC -5.0 -1.0 -1.5 V A A Collector Dissipation (Note 2) PC 2 W Junction Temperature Storage Temperature TJ TSTG 150 -55 ~ +150 C C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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