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2SB798 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP Epitaxial Planar Silicon Transistors FEATURES z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA) z Excellent DC Current Gain Linearity: HFE=100 TYP.(VCE=-1.0V IC=-0.1 Production specification 2SB798 ORDERING INFORMATION Type No. Marking 2SB798 KR/KQ/KP SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Pulse(Note1) -30 V -25 V -5.0 V -1.0 A -1.5 A PC Collector Dissipation(Note2) 2W Tj,Tstg Junction and Storage Temperature -55 to +150 Note: 1. PW≤10ms，Duty Cycle≤50%; 2.When mounted on a ceramic substrate of 16cm2*0.7mm; ℃ E148 Rev.A www.gmicroelec.