Datasheet Summary
PNP Epitaxial Planar Silicon Transistors
Features z Low collector-emitter saturation
Pb
Lead-free voltage VCE(sat).<-0.4V(IC=-0.1A,IB=-100mA) z Excellent DC Current Gain Linearity:
HFE=100 TYP.(VCE=-1.0V IC=-0.1
Production specification
ORDERING INFORMATION
Type No.
Marking
KR/KQ/KP
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Pulse(Note1)
-30 V -25 V -5.0 V -1.0 A -1.5 A
PC Collector Dissipation(Note2)
2W
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Note:
1. PW≤10ms，Duty...
