Full PDF Text Transcription for 3DD13001 (Reference)
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3DD13001. For precise diagrams, and layout, please refer to the original PDF.
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES PC=350mW(Mounted on ceramic substrate). Pb High speed switching. Lead-free...
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mW(Mounted on ceramic substrate). Pb High speed switching. Lead-free Small flat package. APPLICATIONS High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13001 13001 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 600 V 400 V 7V 0.2 A 350 mW -55 to +150 ℃ C186 Rev.A www.gmesemi.
3DD13001 Datasheet
