3DD13001 Description
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001.
3DD13001 Key Features
- PC=350mW(Mounted on ceramic substrate). Pb
- High speed switching
- Small flat package
3DD13001 is High Voltage Fast Switching NPN Power Transistor manufactured by Galaxy Microelectronics.
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001.