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3DD13001 Datasheet

The 3DD13001 is a High Voltage Fast Switching NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number3DD13001
ManufacturerGalaxy Microelectronics
Overview Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on ceramic substrate). Pb  High speed switching. Lead-free  Small flat package. .
* PC=350mW(Mounted on ceramic substrate). Pb
* High speed switching. Lead-free
* Small flat package. APPLICATIONS
* High voltage switch mode application. ORDERING INFORMATION Type No. Marking 3DD13001 13001 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Sy.
Part Number3DD13001
DescriptionNPN Transistors
ManufacturerKexin Semiconductor
Overview SMD Type NPN Transistors 3DD13001 Transistors ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absol.
* Collector-emitter Voltage: V(BR)CEO=400V
* Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter
* Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation.
Part Number3DD13001
DescriptionNPN Transistor
ManufacturerWEJ
Overview . .
Part Number3DD13001
DescriptionNPN Transistor
ManufacturerSeCoS Halbleitertechnologie GmbH
Overview 3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications A TO-9. Power switching applications A TO-92 D B CLASSIFICATION OF hFE(1) Product-Rank Range 3DD13001-A 17~23 3DD13001-B 20~26 G H E C F 3 Emitter J 1Base 2Collector 3Emitter Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 1 Base Collector REF. A B C D E 2 Millimeter Min. Max..

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