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BL10N65 - N-Channel Power Mosfet

Features

  • Extremely High dv/dt Capability.
  • 100% AvalancheTtested.
  • Gate Charge Minimized.
  • Very Good Manufacturing Reliabilty. Pb Lead-free.

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Full PDF Text Transcription

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65 FEATURES  Extremely High dv/dt Capability.  100% AvalancheTtested.  Gate Charge Minimized.  Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS  N-channel Enhancement mode Effect Transistor.  Switching Applications. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 600 V VGS Gate -Source Voltage ID Maximum Drain Current(continuous) at TC=25℃ TC=100℃ IDM Drain Current(pulsed)Note1 PD Power Dissipation at TC=25℃ Vesd(G-S) G-S ESD (HBM C=100pF,R=1.5kΩ) Single Pulse Avalanche Energy EAS (starting Tj=25℃,ID=IAR,VDD=50V) dv/dt Peak Diode Recovery Voltage Slope(Note2) ±30 10 5.
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