BL10N65 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor BL10N65.
BL10N65 Key Features
- Extremely High dv/dt Capability
- 100% AvalancheTtested
- Gate Charge Minimized
- Very Good Manufacturing Reliabilty
- Part: BL10N65
- Manufacturer: Galaxy Microelectronics
- Size: 361.93 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
BELLING |
BL10N65A | Power Mosfet |