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BL10N80F - N-Channel Power MOSFET

Features

  • RDS(ON) =1.1Ω@ VGS = 10V.
  • Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free.
  • Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF ).
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness Production specification BL10N80F ITO-220AB.

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Full PDF Text Transcription

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10A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =1.1Ω@ VGS = 10V  Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free  Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF )  Fast Switching Capability  Avalanche Energy Specified  Improved dv/dt Capability, High Ruggedness Production specification BL10N80F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 800 ±30 10 40 920 24 4.0 36 62.5 3.
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