The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BL10N80
Power MOSFET
1．Description
Step-Down Converter
BL10N80, the silicon N-channel Enhanced
,
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
VDS
800
V
ID
10
A
RDS(ON).Typ
0.
BL10N80 Datasheet
