BL10N80F Datasheet | Galaxy Microelectronics

10A,800V N-Channel Power Mosfet Features - RDS(ON) =1.1Ω@ VGS = 10V - Ultra Low Gate Charge ( Typical 45 n C ) Pb Lead-free - Low Reverse Transfer Capacitance ( CRSS = Typical 15 p F ) - Fast Switching Capability - Avalanche Energy Specified - Improved dv/dt Capability, High Ruggedness Production specification ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value...