The BL817 series of devices each consist of an infrared Emitting diodes, optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in Wide-lead spacing and SMD option.
Key Features
z Current transfer ratio （CTR：50%-600% at IF=5mA,VCE=5V）
z High isolation voltage between inputc and output （Viso=5000V rms）
z Creepage distance＞7.62mm z Pb free and ROHS compliant z UL/CUL Approved (File No. E340048).
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BL817. For precise diagrams, and layout, please refer to the original PDF.
Production specification 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER FEATURES z Current transfer ratio （CTR：50%-600% at IF=5mA,VCE=5V） z High isolation voltage between inputc ...
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TR：50%-600% at IF=5mA,VCE=5V） z High isolation voltage between inputc and output （Viso=5000V rms） z Creepage distance＞7.62mm z Pb free and ROHS compliant z UL/CUL Approved (File No. E340048) Description The BL817 series of devices each consist of an infrared Emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in Wide-lead spacing and SMD option. BL817 Series DIP4L APPLICATIONS z Programmable controllers z System appliances,measuring instruments z Telecommunication equipments z Home appliances,such as fan heaters,etc z Signal transmission between circuits
BL817 Datasheet
