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BSS84 Datasheet Preview

BSS84 Datasheet

P-Channel Vertical D-MOS Transistor

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Production specification
P-Channel Enhancement Mode Vertical D-MOS Transistor
BSS84
FEATURES
Voltage controlled p-channel small
Pb
signal switch
Lead-free
High density cell design for low RDS(ON)
High saturation current
APPLICATIONS
Line current interrupter in telephone sets
Relay,high speed and line transformer drivers
ORDERING INFORMATION
Type No.
Marking
BSS84
SP
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol Parameter
Value
VDS Drain-Source voltage
-50
VGSO
ID
PD
Gate -Source voltage
Drain current (Note 1)
Power Dissipation (Note 1)
Derate Above 25°C
Continuous
Pulse
±20
-130
-520
0.36
2.9
Units
V
V
mA
W
mW/°C
RθJA
TJ,Tstg
TL
Thermal resistance,Junction-to-Ambient
Operating Junction and StorageTemperature
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
350 °C/W
-55 to +150
300
C230
Rev.A
www.gmesemi.com
1




GME

BSS84 Datasheet Preview

BSS84 Datasheet

P-Channel Vertical D-MOS Transistor

No Preview Available !

Production specification
P-Channel Enhancement Mode Vertical D-MOS Transistor
BSS84
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Gate-body Leakage
V(BR)DSS
ΔV(BR)DSS/
ΔTJ
VGS(th)
ΔVGS(th)/Δ
TJ
IGSS
VGS=0V,ID=-250μA
ID = –250 μA,Referenced
to 25°C
VDS=VGS, ID=-1mA
ID = –1 mA,Referenced
to 25°C
VDS=0V, VGS=±20V
-50 - - V
- -48
-
mV/
°C
-0.8 -1.7
-2
V
-3
-
mV/
°C
- - ±100 nA
Zero Gate Voltage Drain Current IDSS
Drain-Source on-resistance
On–State Drain Current
RDS(ON)
ID(on)
VDS=-50V, VGS=0V
VDS=-50V, VGS=0V
TJ= 125°C
VGS = -5 V, ID = -0.1 A
VGS = -5 V,ID = -0.1 A
TJ=125°C
VGS=-5 V, VDS=-10 V
- - -15 μA
- - -60 μA
- 1.2 10
- 1.9 17
-0.6 -
-A
Forwars Transfer admittance
|yfs|
VDS=-25V,ID=-0.1A
0.05 0.6
-
S
Input capacitance
CISS
- 73
-
Output capacitance
COSS
VDS=-25V,VGS=0V,f=1MHz
-
10
-
pF
Reverse transfer capacitance
CRSS
-5
-
Gate Resistance
Turn-On Delay Time
Turn–On Rise Time
Turn-Off Delay Time
Turn–Off Fall Time
RG
tD(ON)
tr
tD(OFF)
tf
VGS=-15 mV, f=1.0 MHz
VDD=-30 V, ID=-0.27A,
VGS=-10 V, RGEN=6
-9 -
- 2.5
5
- 6.3 13
- 10 20
ns
- 4.8 9.6
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous
Drain–Source Diode Forward
Current
Qg
Qgs
Qgd
IS
VDS=-25 V, ID=-0.1A,
VGS=-5 V
- 0.9 1.3
- 0.2
- nC
- 0.3
-
- - -0.13 A
C230
Rev.A
www.gmesemi.com
2


Part Number BSS84
Description P-Channel Vertical D-MOS Transistor
Maker GME
Total Page 6 Pages
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