BSS84
Overview
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching.
- -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
- Voltage-Controlled P-Channel Small-Signal Switch
- High-Density Cell Design for Low RDS(ON)
- High Saturation Current *
- S SOT-23 G G
