BSS84 Datasheet

The BSS84 is a Small Signal MOSFET.

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Part NumberBSS84
ManufacturerROHM
Overview BSS84 　　Pch -60V -0.23A Small Signal MOSFET VDSS RDS(on)(Max.) ID PD -60V 5.3Ω ±0.23A 350mW lFeatures 1) Trench MOSFET technology 2) Very fast switching 3) 4.5V Drive lOutline SOT-23 SST3 　 　 　　　　. 1) Trench MOSFET technology 2) Very fast switching 3) 4.5V Drive lOutline SOT-23 SST3 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching circuits Type Tape width (mm) Quantity (pcs) 8 3000 High-side loadswitch .
Part NumberBSS84
DescriptionP-Channel MOSFET
Manufactureronsemi
Overview This P−channel enhancement−mode field−effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistance and to .
*
*0.13 A,
*50 V, RDS(on) = 10 W at VGS =
*5 V
* Voltage
*Controlled P
*Channel Small
*Signal Switch
* High
*Density Cell Design for Low RDS(on)
* High Saturation Current
* This Device is Pb
*Free and Halogen Free DATA SHEET www.onsemi.com D G S SOT
*23
*3 CASE 318
*08 MARKING DIAGRAM 3 Drain SPMG G 1 .
Part NumberBSS84
DescriptionP-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and .
* -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
* Voltage-Controlled P-Channel Small-Signal Switch
* High-Density Cell Design for Low RDS(ON)
* High Saturation Current D D S SOT-23 G G Absolute Maximum Ratings S Description This P-channel enhancement-mode field-effect transistor is produ.
Part NumberBSS84
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type Ƶ Features ƽ VDS (V) = -50V ƽ ID = -130 mA ƽ RDS(ON) ˘ 10ȍ (VGS = -5V) TraMnOsiSsFtoErsT P-Channel MOSFET BSS84 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.2. ƽ VDS (V) = -50V ƽ ID = -130 mA ƽ RDS(ON) ˘ 10ȍ (VGS = -5V) TraMnOsiSsFtoErsT P-Channel MOSFET BSS84 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 D G S 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.

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