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BSS84 - P-Channel MOSFET

Key Features

  • ƽ VDS (V) = -50V ƽ ID = -130 mA ƽ RDS(ON) ˘ 10ȍ (VGS = -5V) TraMnOsiSsFtoErsT P-Channel MOSFET BSS84 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 D G S 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tpİ10ȝs) Power Dissipation Thermal Resistance. Junction-.

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SMD Type Ƶ Features ƽ VDS (V) = -50V ƽ ID = -130 mA ƽ RDS(ON) ˘ 10ȍ (VGS = -5V) TraMnOsiSsFtoErsT P-Channel MOSFET BSS84 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 D G S 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.10.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tpİ10ȝs) Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating -50 ±20 -130 -520 225 556 150 -55 to 150 Unit V mA mW ć/W ć www.kexin.com.