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BST39 Datasheet Preview

BST39 Datasheet

NPN High-Voltage Transistor

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NPN High-Voltage Transistor
FEATURES
z Low current(max.100mA).
z PC=1.3W.
z High voltage(max.350v).
Pb
Lead-free
APPLICATIONS
z General purpose switching and amplification.
Production specification
BST39/BST40
ORDERING INFORMATION
Type No.
Marking
BST39/BST40
AT1/AT2
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
BST39
BST40
BST39
BST40
400
300
350
250
VEBO
Emitter-Base Voltage
5
IC Collector Current -DC
100
ICM Peak Collector Current
200
IBM Peak Base Current
100
Ptot Total powerDissipation
1.3
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
mA
mA
W
E029
Rev.A
www.gmicroelec.com
1




GME

BST39 Datasheet Preview

BST39 Datasheet

NPN High-Voltage Transistor

No Preview Available !

Production specification
NPN High-Voltage Transistor
BST39/BST40
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IC=100μA,IE=0 BST39
BST40
IC=1mA,IB=0
BST39
BST40
IE=100μA,IC=0 BST39
BST40
400
300
350
250
5
V
V
V
Collector cut-off current
ICBO
VCB=300V,IE=0
20 nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1 μA
DC current gain
hFE VCE=10V,IC=20mA
40
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector capacitance
Cc
IC=50mA, IB=4mA
VCE=10V,IC=10mA,
f=100MHz
VCE=10V,IE=ie=0,f=1MHz
70
0.5 V
MHz
2 pF
E029
Rev.A
www.gmicroelec.com
2


Part Number BST39
Description NPN High-Voltage Transistor
Maker GME
Total Page 3 Pages
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