MBR30200CT Datasheet | Galaxy Microelectronics

FEATURES z High Surge Capacity. Pb z For Use In Low Voltage,High Frequency Inverters, Lead-free Free Wheeling and Polarity Protection Applications. z Metal Silicon Junction,Majority Carrier Conduction. z High Current Capacity,Low Forward Voltage Drop. z Guard Ring for Over Voltage Protection. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBR30150CT MBR30200CT Unit VRRM VRMS Repetitive Peak Reverse Voltage RMS Voltage 150 200 V 105 140 V VDC IF(AV) IFSM DC Blocking Voltage Average Forward Rectified Current @TA=100℃ Peak Forward Surge Current 8.3ms Single Half Sine-wave superimposed on rated load 150 200 30 200 RθJC Thermal Resistance (Note1) Tj Tstg Operating Junction and Storage Temperature Range Note:1.Thermal resistance from junction to case. 4.4 -55 to +150 ℃/W ℃ X072 Rev.A .gmicroelec. 1 Production specification Schottky Barrier Rectifier MBR30150CT…MBR30200CT ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Current Symbol IR Test conditions VRM=VRRM,TA=25℃ VRM=VRRM,TA=125℃ MBR30150CT MBR30200CT MAX 0.1 50 Forward Voltage VF (Note1) IF=15A ,TA=25℃ Note:1.Pulse tese:300µs pulse width,1% duty...