MBRF20150 Datasheet | Galaxy Microelectronics

FEATURES z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection Applications. ITO-220AC MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRF20150 MBRF20200 Unit VRRM Recurrent Peak Reverse Voltage 150 200 V VRMS VDC I(AV) IFSM RθJC Tj Tstg RMS Reverse Voltage DC Blocking Voltage Average Forward Total Device Rectified Current @TA=100℃ Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load Typical Thermal Resistance Junction to Case (Note 1) Operating Junction and Storage Tem-perature Range 105 140 150 200 20 150 1.5 -55 to +150 V V A A ℃/W ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Current Symbol Test conditions VR=VRRM,TA=25℃ VR=VRRM,TA=125℃ MBRF20200 0.1 50 Forward Voltage IF=20A 0.90 0.95 UNIT m A V R036 Rev.A .gmicroelec. 1 Schottky Barrier Rectifier Production specification MBRF20150--MBRF20200 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...