Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Representative IRLZ44N image (package may vary by manufacturer)
| Part Number | Manufacturer | Description |
|---|---|---|
| IRLZ44N | Inchange Semiconductor | N-Channel MOSFET |
| IRLZ44NS | Inchange Semiconductor | N-Channel MOSFET |
| IRLZ44NPBF | VBsemi | N-Channel 60V MOSFET |
| IRLZ44ZS | Inchange Semiconductor | N-Channel MOSFET |
| IRLZ44A | Samsung Semiconductor | ADVANCED POWER MOSFET |
| IRLZ44 | Vishay | Power MOSFET |
| IRLZ44 | Samsung Semiconductor | N-Channel MOSFET |
| IRLZ44Z | Inchange Semiconductor | N-Channel MOSFET |
| IRLZ40 | Samsung Semiconductor | N-Channel MOSFET |
