Datasheet4U Logo Datasheet4U.com

IRLZ44NLPBF - Power MOSFET

Download the IRLZ44NLPBF datasheet PDF. This datasheet also covers the IRLZ44NSPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLZ44NSPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLZ44N N-Channel MOSFET INCHANGE
IRLZ44NPBF N-Channel 60V MOSFET VBsemi
IRLZ44NS N-Channel MOSFET INCHANGE
IRLZ44 N-Channel MOSFET Samsung semiconductor
IRLZ44 Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLZ44NL Power MOSFET
IRLZ44N Power MOSFET
IRLZ44NPBF POWER MOSFET
IRLZ44NS Power MOSFET
IRLZ44NSPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95156 IRLZ44NS/LPbF Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.022Ω G ID = 47A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.