Full PDF Text Transcription for MJD2955 (Reference)
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MJD2955. For precise diagrams, and layout, please refer to the original PDF.
Production specification Epitaxial Planar PNP Transistor FEATURES Lead formed for surface mount Pb applications. Lead-free Straight lead. Electrically similar to po...
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applications. Lead-free Straight lead. Electrically similar to popular MJE2955T. DC current gain specified to 10A. APPLICATIONS Low speed switching applications. D-PAK for surface mount applications. MJD2955 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -10 A IB Base Current -6 A PC Collector Power Dissipation 1.75 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)031 Rev.A www.gmesemi.
MJD2955 Datasheet
