Excellent Safe Operating Area
Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A
Complement to Type MJD3055
DPAK for Surface Mount Applications
Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
Designed
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isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current
-6
A
Collector Power Dissipation @TC=25℃
20
PC
W
Collector Power Dissipation @TC=25℃ 1.
MJD2955 Datasheet
