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MJD2955 Datasheet PDF

JCST MJD2955

PNP Transistor

Part No. MJD2955
Datasheet MJD2955 Download
Manufacturer
JCST
Description PNP Transistor
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MJD2955 datasheet page 1 preview

FEATURES

y Designed for General Purpose Amplifier and Low Speed Switching

APPLICATIONS

y Electrically Simiar to MJD3055 y DC Current Gain Specified to10 Amperes

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-251-3L 1.BASE 2.COLLECTOR 3.EMITTER

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-200 mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 Collector cut-off current ICBO ICEO VCB=-70V,IE=0