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MJD2955 - PNP Transistor

Key Features

  • y Designed for General Purpose Amplifier and Low Speed Switching.

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Datasheet Details

Part number MJD2955
Manufacturer JCST
File Size 259.95 KB
Description PNP Transistor
Datasheet download datasheet MJD2955 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD2955 TRANSISTOR (PNP) FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 y DC Current Gain Specified to10 Amperes MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-251-3L 1.BASE 2.COLLECTOR 3.