| Part Number | MJD2955 Datasheet |
|---|---|
| Manufacturer | JCST |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD2955 TRANSISTOR (PNP) FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Appli. y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 y DC Current Gain Specified to10 Amperes MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Volta. |
MJD2955 Datasheet and Specifications PDF
The MJD2955 is a PNP Transistor.
| Part Number | MJD2955 Datasheet |
|---|---|
| Description | Complementary Power Transistors |
| Manufacturer | onsemi |
| Overview |
MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching a.
* Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves (“ *1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain *Bandwidth Product * fT = 2.0 MHz (Min) @ IC = 500 mA. |
| Part Number | MJD2955 Datasheet |
|---|---|
| Description | General Purpose Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, . Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = - 30mA, IB = 0 VCE = - 30V, IE = 0 VCB = - 70V, IE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 4A VCE. |
| Part Number | MJD2955 Datasheet |
|---|---|
| Description | Epitaxial Planar NPN Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Production specification
Epitaxial Planar PNP Transistor
FEATURES
Lead formed for surface mount
Pb
applications.
Lead-free
Straight lead.
Electrically similar to popular MJE2955T.
DC .
* Lead formed for surface mount Pb applications. Lead-free * Straight lead. * Electrically similar to popular MJE2955T. * DC current gain specified to 10A. APPLICATIONS * Low speed switching applications. * D-PAK for surface mount applications. MJD2955 TO-251 TO-252 MAXIMUM RATING oper. |