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MJD2955 - SMD Power Transistor

General Description

MJD2955 Marking Code MJD2955 VCEO Collector-Emitter Voltage 60 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 70 5 IC Collector Current Continuous IB Base Current 10 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 PD TJ, TSTG Power Dissipation at TA=25°C Derate

Key Features

  • Designed for general purpose amplifier and low speed switching.

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Datasheet Details

Part number MJD2955
Manufacturer TAITRON
File Size 214.33 KB
Description SMD Power Transistor
Datasheet download datasheet MJD2955 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Power Transistor (PNP) MJD2955 SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD2955 Marking Code MJD2955 VCEO Collector-Emitter Voltage 60 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 70 5 IC Collector Current Continuous IB Base Current 10 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.75 0.