MJD2955 - Epitaxial Planar NPN Transistor

Galaxy Microelectronics

Key Features

Lead formed for surface mount Pb.

MJD2955 epitaxial planar npn transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	MJD2955
Manufacturer	Galaxy Microelectronics
File Size	169.48 KB
Description	Epitaxial Planar NPN Transistor
Datasheet	MJD2955 Datasheet

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MJD112	Epitaxial Planar NPN Transistor
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Production specification Epitaxial Planar PNP Transistor FEATURES  Lead formed for surface mount Pb applications. Lead-free  Straight lead.  Electrically similar to popular MJE2955T.  DC current gain specified to 10A. APPLICATIONS  Low speed switching applications.  D-PAK for surface mount applications. MJD2955 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -10 A IB Base Current -6 A PC Collector Power Dissipation 1.75 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)031 Rev.A www.gmesemi.