Galaxy Century Microelectronics MJD2955
Epitaxial Planar NPN Transistor
| Part No. | MJD2955 |
|---|---|
| Datasheet | MJD2955 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Epitaxial Planar NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Lead formed for surface mount Pb applications. Lead-free● Straight lead.
● Electrically similar to popular MJE2955T.
● DC current gain specified to 10A.
APPLICATIONS
● Low speed switching applications.● D-PAK for surface mount applications. MJD2955 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -10 A IB Base Current -6 A PC Collector Power Dissipation 1.75 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)031 Rev.A 1 Production specification Epitaxial Planar PNP Transistor MJD2955
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-emitter sustaining voltage V
