MJD2955
MJD2955 is Epitaxial Planar NPN Transistor manufactured by Galaxy Microelectronics.
FEATURES
- Lead formed for surface mount
Pb applications.
Lead-free
- Straight lead.
- Electrically similar to popular MJE2955T.
- DC current gain specified to 10A.
APPLICATIONS
- Low speed switching applications.
- D-PAK for surface mount applications.
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-70 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-10 A
IB Base Current
-6 A
PC Collector Power Dissipation
1.75 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V/(W)031 Rev.A
.gmesemi.
Production...
