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MMBT3906T - PNP General Purpose Transistor

Features

  • Epitaxial planar die construction.
  • Complementary NPN type available (MMBT3904T).
  • Low Current (Max:-200mA).
  • Low Voltage(Max:-40V). Pb Lead-free MMBT3906T.

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Full PDF Text Transcription

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Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBT3904T).  Low Current (Max:-200mA).  Low Voltage(Max:-40V). Pb Lead-free MMBT3906T APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBT3906T 3N SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER MMBT3906T VCBO collector-base voltage -40 VCEO collector-emitter voltage -40 VEBO emitter-base voltage -5 IC collector current (DC) -200 Pd Power dissipation 150 RθJA Thermal resistance, junction to Ambient 833 Tstg storage temperature range -55 to +150 Tj junction temperature 150 UNIT V V V mA mW °C/W °C °C H015 Rev.
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