• Part: MMBT3906T
  • Description: PNP Transistor
  • Manufacturer: LGE
  • Size: 194.15 KB
Download MMBT3906T Datasheet PDF
MMBT3906T page 2
Page 2

Datasheet Summary

1. BASE 2. EMITTER 3. COLLECTOR Features — Epitaxial Planar Die Construction — plementary NPN Type Available — Also Available in Lead Free Version MARKING:3N SOT-523 Transistor (PNP) SOT-523 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -40 -40 -5.0 -200 V V V mA PC Collector Power Dissipation 150 mW RƟJA Thermal Resistance, Junction to Ambient 833 ℃/W TJ Operating Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise...