MMBT3906T
MMBT3906T is General Purpose Transistor PNP Silicon manufactured by WEITRON.
General Purpose Transistor PNP Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature
Storage Temperature
COLLECTOR 3
1 BASE
2 EMITTER
Symbol VCEO VCBO VEBO
1 2
SC-89 (SOT-523F)
Value -40 -40 -5.0
-200
Unit V V V m A
Symbol
PD RθJA
PD RθJA
TJ Tstg
Max 200
1.6 600 300
2.4 400 -55 to +150
-55 to +150
Unit m W m W/°C °C/W m W m W/°C °C/W
°C
°C
Device Marking
MMBT3906T = 2A
Electrical Characteristics (TA=25°C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=-1.0m Adc.IB=0) Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)...
