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RB461F - Schottky Barrier Diode

Key Features

  • Small total capacitance.
  • Power dissipation. (PD=150mW) Pb Lead-free Production specification RB461F.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
RB491D Schottky barrier diode

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode FEATURES  Small total capacitance.  Power dissipation.(PD=150mW) Pb Lead-free Production specification RB461F APPLICATIONS  For general purpose applications. ORDERING INFORMATION Type No. Marking RB461F 3B SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Diode reverse voltage VR 20 Forward continuous Current IF 700 Power Dissipation Pd 150 Junction temperature Tj 150 Storage temperature range Tstg -55 to +150 Unit V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Reverse breakdown voltage V(BR)R IR=1mA Reverse current Forward voltage IR VR=20V VF IF=700mA MIN Typ. 20 MAX 200 0.49 UNIT V μA V F025 Rev.A www.gmesemi.