ROHM Semiconductor RB461F
Schottky barrier diode
| Part No. | RB461F |
|---|---|
| Datasheet | RB461F Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
APPLICATIONS
Low power rectification●Dimensions (Unit : mm)
●Land size figure (Unit : mm) 1.3 1 .25 ±0. 1 2.1±0.1 0.1Min 0.9MIN. 1.6
●
FEATURES
1)Small mold type. (UMD3) 2)Low VF. 3)High reliability●Construction Silicon epitaxial planer 2.0±0.2 0.3±0.1 各Eリaーchドleとadもhas same dimension 同寸法 0.15±0.05 (3) (2) （0.65） （0.65） 1.3±0.1 (1) 0～0.1 0.7±0.1 0.9±0.1 ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory)
●Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.65 0.8MIN UMD3
●Structure 0.3±0.1 1.75±0.1 8.0±0.2 3.5±0.05 2.4±0.1 2.4±0.1 5.5±0.2 0～0.1 2.25±0.1 0 4.0±0.1 φ0.5±0.05 1.25±0.1
●Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz●1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 25 20 0.7 3 125 40 to 125 Unit V V A A °C °C
●Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min.
